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DARPA Microsystems Technology Office – Advanced Sources for Single-event Effects Radiation Testing (ASSERT) – HR001123S0047

Home / Funding Opportunity / DARPA Microsystems Technology Office – Advanced Sources for Single-event Effects Radiation Testing (ASSERT) – HR001123S0047

DARPA Microsystems Technology Office – Advanced Sources for Single-event Effects Radiation Testing (ASSERT) – HR001123S0047

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DARPA is seeking proposals for the research and development of experimental radiation sources and techniques for single-event effects (SEE) testing of advanced node and 3D heterogeneously integrated (3DHI) electronics.

The ASSERT program seeks to develop novel, compact SEE test sources and techniques to enable the radiation-hardness characterization of advanced 3D components, inform new device designs and selection, update radiation-hardening-by-design (RHBD) rules, and validate new
computational models and simulation tools. ASSERT sources will be used to characterize mixed signal devices containing a multiplicity of materials including but not limited to silicon, GaAs, wide bandgap materials such as SiC and GaN, and emerging ultrawide bandgap materials such as cubic boron nitride, gallium oxide, and silicon nitride.

ASSERT will be a 54 month program organised into 3 phases with two technical challenges:

  • Achieving deep penetration depths
  • Achieving fine spatial resolution

Abstracts are due 4 August 2023, with full proposals due 15 September 2023.  Abstract submission is not mandatory but is strongly encouraged.

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Documentation

Broad Agency Announcement – ASSERT

 

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