DARPA’s MXO will be actively monitoring ERIS for innovative, post-competitive, awardable solutions that address the need for new capabilities to grow large-scale complex inorganic materials at single-crystal quality until 31 July 2026.
DARPA is seeking solutions for added controls in material growth. It is expected that the added controls will need to be localized to some extent to allow precise compositional and structural control over the resulting atomic and crystallographic arrangements in synthesized complex material thin films. Some preferred solutions include, but are not limited to, energy modalities such as plasma, electric fields, electron beams, and acoustic waves, or phase selectivity using specific organic precursor chemistries, among others. Specifically excluded are any approaches utilizing light or optical controls, such as, but not limited to, laser-based localized control and substrate engineering as a form of control.
Potential solutions are to be uploaded to the ERIS portal under Topic Area 2 – Developing Advanced Technologies for Improved Resilience, Efficiency and Effectiveness of Strategic Systems.
Document
ERIS Shopping Notice – New Growth Controls for Achieving Single-Crystal Complex Inorganic Materials – DARPA-SN-26-83-Amendment-01
