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DARPA – Ultra-Wide BandGap Semiconductors (UWBGS) – HR001123S0051

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DARPA – Ultra-Wide BandGap Semiconductors (UWBGS) – HR001123S0051

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DARPA Microsystems Technology Office is seeking innovative proposals to develop foundational ultra-wide bandgap (UWBG) materials (substrate, device layers, and junctions) and low resistance electrical contacts necessary for realization of devices that enable UWBG applications.

UWBGS will be a 3 year, two phase program

  • Phase 1 – base – 24 months – UWBG material and contact development
  • Phase 2 – option – 12 months – UWBG material and contact scaling

UEBGS has two technical areas of focus.  Each technical area is independent and separate submissions must be made for each.

  • Technical Area 1 – UWBG Substrates – focused on improving UWBG material quality (ie reducing defect density and surface roughness) while increasing substrate size (diameter)
  • Technical Area 2 – UWBG Device Layers and Electrical Contacts – focused on developing device layers and homo-/heterostructures with efficient and controlled introduction of electrically active carriers that achieves 60% of the theoretical doping efficiency for the proposed material, referred to as the normalized doping efficiency.

 

The submission of abstracts by 1 November 2023 is strongly encouraged.

Full submissions are due 15 December 2023.

 

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Document

Broad Agency Announcement – UWBGS : HR001123S0051

 

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